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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/137

Title: Modeling of the CoolMOSTM transistor - Part I: device physics
Authors: PATIL, MB
DANIEL, BJ
PARIKH, CD
Keywords: power mosfet
semiconductor device models
Issue Date: 2002
Publisher: IEEE
Citation: IEEE Transactions on Electron Devices 49(5), 916-22
Abstract: CoolMOSTM is a novel power MOSFET with a "superjunction" for its drift region, which results in a vastly improved relationship between the on resistance and breakdown voltage. The presence of the superjunction makes the device physics very interesting and complicated. In this paper, we present simulation results aimed at understanding the device operation both in the on state and in the off state. Quasi saturation of the drain current is analyzed, and it is shown that it can be prevented by increasing the doping density of the drift region. An analytic model of the JFET-like drift region is presented. A CoolMOSTM transistor model based on the simulation results described here will be presented in an accompanying paper.
URI: http://dx.doi.org/10.1109/16.998603
http://hdl.handle.net/10054/137
http://dspace.library.iitb.ac.in/xmlui/handle/10054/137
ISSN: 0018-9383
Appears in Collections:Article

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