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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/128

Title: High field stressing effects on the split N2O grown thin gate dielectric by rapid thermal processing
Authors: SUBRAHMANYAM, PVS
PRABHAKAR, A
VASI, J
Keywords: rapid thermal processing
dielectric thin films
high field effects
electron traps
Issue Date: 1997
Publisher: IEEE
Citation: IEEE Transactions on Electron Devices 44(3), 505-08
Abstract: Highly reliable thin oxynitride layers of very good Si-SiO2 interface endurance were grown on silicon wafers with a split N 2O cycle (N2O/O2/N2O) employing rapid thermal processing (RTP). Excellent electrical characteristics with reduced positive charge generation, electron trapping and/or interface state generation were achieved under high field stressing compared to pure N2O dielectric.
URI: http://dx.doi.org/10.1109/16.556163
http://hdl.handle.net/10054/128
http://dspace.library.iitb.ac.in/xmlui/handle/10054/128
ISSN: 0018-9383
Appears in Collections:Article

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