DSpace
 

DSpace at IIT Bombay >
IITB Publications >
Article >

Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/1234

Title: Reactively sputtered GaAsxN1-x thin films
Authors: YADAV, BRAJESH S
MAJOR, SS
SRINIVASA, RS
Keywords: sputtering
thin films
structure
optical properties
Issue Date: 2006
Publisher: Elsevier
Citation: Thin Solid Films 515(3), 1043-1046
Abstract: Thin films of GaAsxN1−x alloys were deposited by reactive rf magnetron sputtering of GaAs target with a mixture of argon and nitrogen as the sputtering gas. Growth rate was found to decrease from ~ 7 μm/h to ~ 2 μm/h as the nitrogen content increased from 0% to 40%. XRD and TEM studies of the films reveal the presence of hexagonal GaN with a significant increase of the lattice parameters in a narrow range of composition of the sputtering gas (5–10% nitrogen), which is attributed to the incorporation of arsenic. The limited availability of nitrogen in the sputtering atmosphere is found to encourage the incorporation of arsenic in the alloy films. Optical absorption coefficient spectra of the films were obtained from reflection and transmission data. The effect of arsenic incorporation is seen in the optical absorption spectra of the films, which show a continuous shift of the absorption edge to lower energies with respect to that of gallium nitride.
URI: 10.1016/j.tsf.2006.07.062
http://hdl.handle.net/10054/1234
http://dspace.library.iitb.ac.in/xmlui/handle/10054/1234
ISSN: 0040-6090
Appears in Collections:Article

Files in This Item:

File Description SizeFormat
5548-2.pdf750.15 kBAdobe PDFView/Open
View Statistics

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

 

Valid XHTML 1.0! DSpace Software Copyright © 2002-2010  Duraspace - Feedback