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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/122

Title: Power-area evaluation of various double-gate RF mixer topologies
Authors: PATIL, MB
REDDY, MVR
SHARMA, DK
RAMGOPAL RAO, V
Keywords: electric network topology
field effect transistors
gates (transistor)
mixer circuits
power electronics
semiconductor device models
Issue Date: 2005
Publisher: IEEE
Citation: IEEE Electron Device Letters 26(9), 664-66
Abstract: In this letter, we analyze the suitability of the double gate MOSFETs (DG MOSFETs) for RF-mixer applications from the point of optimizing the transconductance gain, power consumption, and area. Mixer topologies using the 0.13-μm conventional MOSFETs, simultaneously driven DG MOSFETs (SDDG) and the independently driven DG MOSFETs (IDDG) are compared using extensive device simulations. In the frequency range 1-40 GHz, our simulation results show that the mixer circuits realized using the SDDG technologies show an order of magnitude lower power-area product, for a given transconductance gain, compared to the conventional and the IDDG technologies.
URI: http://dx.doi.org/10.1109/LED.2005.853632
http://hdl.handle.net/10054/122
http://dspace.library.iitb.ac.in/xmlui/handle/10054/122
ISSN: 0741-3106
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