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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/118

Title: Performance and hot-carrier reliability of 100 nm channel length jet vapor deposited Si3N4 MNSFETs
Authors: MAHAPATRA, S
RAMGOPAL RAO, V
CHENG, B
KHARE, M
PARIKH, CD
WOO, JCS
VASI, J
Keywords: misfet
dielectric thin films
electron traps
elemental semiconductors
semiconductor device reliability
silicon compounds
Issue Date: 2001
Publisher: IEEE
Citation: IEEE Transactions on Electron Devices 48(4), 679-84
Abstract: Metal-nitride-semiconductor FETs (MNSFETs) having channel lengths down to 100 mm and a novel jet vapor deposited (JVD) Si3N4 gate dielectric have been fabricated and characterized. When compared with MOSFETs having a thermal SiO2 gate insulator, the MNSFETs show a comparable drain current drive, transconductance, subthreshold slope and pre-stress interface quality. A novel charge pumping technique is employed to characterize the hot-carrier induced interface-trap generation in MNSFETs and MOSFETs. Under identical substrate current during stress, MNSFETs show less interface-state generation and drain current degradation, for various channel lengths, stress times and supply voltages, despite the fact that the Si-Si3N4 barrier (2.1 eV) is lower than the Si-SiO2 barrier (3.1 eV). The time and voltage dependence of hot-carrier degradation has been found to be distinctly different for MNSFETs compared to SiO2 MOSFETs.
URI: http://dx.doi.org/10.1109/16.915686
http://hdl.handle.net/10054/118
http://dspace.library.iitb.ac.in/xmlui/handle/10054/118
ISSN: 0018-9383
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