DSpace at IIT Bombay >
IITB Publications >
Please use this identifier to cite or link to this item:
|Title: ||Validation of the small-signal model of a forward-biased p-n junction diode|
|Authors: ||KUMAR, PR|
|Issue Date: ||2000|
|Publisher: ||PERGAMON-ELSEVIER SCIENCE LTD|
|Citation: ||SOLID-STATE ELECTRONICS, 44(7), 1247-1253|
|Abstract: ||Small-signal parameters of an abrupt p-n junction diode under forward bias are computed numerically by solving Poisson's equation and continuity equations together. The parameter values are compared with those obtained with analytical expressions. It is found that the depletion capacitance is underestimated when the depletion approximation is used. The diffusion conductance and capacitance values agree with theory only in a limited range of forward bias voltages, and this range becomes smaller as the minority carrier lifetime decreases. The reasons behind the discrepancy are discussed. (. .|
|Appears in Collections:||Article|
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.