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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/11202

Title: PROFILING GENERATION LIFETIME IN AN MOS CAPACITOR USING A MULTISTEP CONSTANT-CAPACITANCE TECHNIQUE
Authors: LAL, R
VASI, J
Issue Date: 1987
Publisher: PERGAMON-ELSEVIER SCIENCE LTD
Citation: SOLID-STATE ELECTRONICS, 30(8), 801-805
URI: http://dx.doi.org/10.1016/0038-1101(87)90004-9
http://dspace.library.iitb.ac.in/xmlui/handle/10054/11202
http://hdl.handle.net/10054/11202
ISSN: 0038-1101
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