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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/11183

Title: POWER LAW MODEL FOR POSITIVE CHARGE BUILDUP IN SILICON DIOXIDE DUE TO HIGH-FIELD STRESSING
Authors: PATRIKAR, RM
LAL, R
VASI, J
Keywords: sio2
generation
breakdown
Issue Date: 1993
Publisher: PERGAMON-ELSEVIER SCIENCE LTD
Citation: SOLID-STATE ELECTRONICS, 36(5), 723-726
Abstract: Positive charge growth in the oxide of a MOS capacitor due to tunnel injection during high-field stressing is found to obey a power law with respect to time. This law is valid for both constant voltage and constant current stress, though the constants of the power law are different. Monotonic increase in positive charge build-up is observed until breakdown. Thus positive charge build-up is a signature of wearout and can be used to monitor the oxide degradation.
URI: http://dx.doi.org/10.1016/0038-1101(93)90241-H
http://dspace.library.iitb.ac.in/xmlui/handle/10054/11183
http://hdl.handle.net/10054/11183
ISSN: 0038-1101
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