DSpace
 

DSpace at IIT Bombay >
IITB Publications >
Article >

Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/11073

Title: NEW METHOD FOR ASSESSING DIELECTRIC INTEGRITY OF MOS OXIDES
Authors: PATRIKAR, RM
LAL, R
Keywords: breakdown
devices
sio2
gate
Issue Date: 1992
Publisher: PERGAMON-ELSEVIER SCIENCE LTD
Citation: MICROELECTRONICS AND RELIABILITY, 32(7), 961-986
Abstract: Evaluation of dielectric integrity of MOS oxides is essential because the performance, especially relative long term performance of modern MOS integrated circuits depends upon the functional stability of thin oxides. Since mechanisms of high field degradation are not yet clear, critical assessment of dielectric qualities of oxides based on microscopic models of wearout can not be done. However experimental observations, such as positive charge generation with high field stressing are common. Also microscopic defects generation because of high field stressing seems to be the cause of degradation. We have shown that defect generation shows same behavior over a large range of stress conditions. Our experiments show that there is a monotonic flat band voltage shift with stressing because of this. This flatband shift acts as a signature of wearout. On the basis of these observations a new method is suggested for assessing dielectric reliability and has the advantage of being close to the physical mechanisms of high field degradation of oxides.
URI: http://dx.doi.org/10.1016/0026-2714(92)90436-O
http://dspace.library.iitb.ac.in/xmlui/handle/10054/11073
http://hdl.handle.net/10054/11073
ISSN: 0026-2714
Appears in Collections:Article

Files in This Item:

There are no files associated with this item.

View Statistics

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

 

Valid XHTML 1.0! DSpace Software Copyright © 2002-2010  Duraspace - Feedback