NCDP-plated CdSe film: Growth and characterization

Abstract

Polycrystalline thin films of n-type CdSe (thickness 1-2 mu m) were grown on Zn substrates by noncatalytic displacement plating using aqueous solutions of CdSO4 and SeO2 in acidic pH. Thickness measurement nias performed by the chemical stripping method as well as by the capacitance method. The electrical characterization comprises ohmic contact study, resistivity, conductivity, and impedance measurements. The optical characterization was determined by photocurrent action spectrum and visible reflectance spectrum studies. Crystallographic structure and surface morphology were analyzed by X-ray diffraction and scanning electron microscopy. Average grain size of the order of micrometers and well-defined grain boundaries were observed. (C) 1998 .