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|Title: ||Morphology and resistivity of Al thin films grown on Si(111) by molecular beam epitaxy|
|Authors: ||JOSHI, N|
|Issue Date: ||2005|
|Publisher: ||PERGAMON-ELSEVIER SCIENCE LTD|
|Citation: ||VACUUM, 79(3-4), 178-185|
|Abstract: ||Thin films of aluminium metal with varying thickness between 10 and 200nm were grown on (I 1 1) Si substrates at 250 degrees C under UHV conditions using molecular beam epitaxy (MBE). Grown thin films were characterized by in situ Xray photoelectron spectroscopy, and ex situ X-ray diffraction, atomic force microscopy and temperature-dependent electrical resisitivity measurements. The results showed that (i) films grow via 3D-island Volmer-Weber growth mechanism, (ii) with increasing film thickness the average grain size increases and the coalescence takes place for thickness > 60 nm, and (iii) independent of the thickness, films grow with (111) orientation. The room-temperature value of resistivity contrary to the predictions of existing theoretical models is found to increase monotonically up to a thickness of 40 nm. This anomalous feature was understood in terms of the film morphology, whereby charge transport takes place via variable range hopping (VRH). For film thickness <= 50 nm, the resistivity vs. temperature curves exhibited a metal-to-insulator (M-I) transition at low temperature, and analysis of insulating region supported the 2D-VRH mechanism of charge transport. However, for thickness >= 60 mn the resistivity decreased sharply and the M-I transition disappeared. The bulk value of resistivity (2.59 mu Omega cm) was obtained for thickness > 200 urn. (c) 2005|
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