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|Title: ||INTERFACE STATE GENERATION DUE TO HIGH-FIELD STRESSING IN MOS OXIDES|
|Authors: ||PATRIKAR, RM|
|Keywords: ||reoxidized nitrided oxides|
|Issue Date: ||1995|
|Publisher: ||PERGAMON-ELSEVIER SCIENCE LTD|
|Citation: ||SOLID-STATE ELECTRONICS, 38(2), 477-480|
|Abstract: ||The results of high-field stressing experiments for dry oxides, pyrogenic oxides, nitrided pyrogenic oxides and reoxidized nitrided pyrogenic oxides are presented in this paper. Pyrogenic oxides show poor high-field properties, but nitridation and reoxidation improves them considerably. In fact, the high-field performance of reoxidized nitrided pyrogenic oxides is even superior to that of dry oxides. Our results indicate that improvement occurs due to inhibition of hydrogen drift.|
|Appears in Collections:||Article|
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