Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/xmlui/handle/10054/10965
Title: INTERFACE STATE GENERATION DUE TO HIGH-FIELD STRESSING IN MOS OXIDES
Authors: PATRIKAR, RM
LAL, R
VASI, J
Keywords: Reoxidized Nitrided Oxides
Silicon Dioxide
Trapped Holes
Radiation
Degradation
Capacitors
Sio2
Issue Date: 1995
Publisher: PERGAMON-ELSEVIER SCIENCE LTD
Citation: SOLID-STATE ELECTRONICS, 38(2), 477-480
Abstract: The results of high-field stressing experiments for dry oxides, pyrogenic oxides, nitrided pyrogenic oxides and reoxidized nitrided pyrogenic oxides are presented in this paper. Pyrogenic oxides show poor high-field properties, but nitridation and reoxidation improves them considerably. In fact, the high-field performance of reoxidized nitrided pyrogenic oxides is even superior to that of dry oxides. Our results indicate that improvement occurs due to inhibition of hydrogen drift.
URI: http://dx.doi.org/10.1016/0038-1101(94)00089-X
http://dspace.library.iitb.ac.in/xmlui/handle/10054/10965
http://hdl.handle.net/10054/10965
ISSN: 0038-1101
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