Please use this identifier to cite or link to this item:
|Title:||INTERFACE STATE GENERATION DUE TO HIGH-FIELD STRESSING IN MOS OXIDES|
|Keywords:||Reoxidized Nitrided Oxides|
|Publisher:||PERGAMON-ELSEVIER SCIENCE LTD|
|Citation:||SOLID-STATE ELECTRONICS, 38(2), 477-480|
|Abstract:||The results of high-field stressing experiments for dry oxides, pyrogenic oxides, nitrided pyrogenic oxides and reoxidized nitrided pyrogenic oxides are presented in this paper. Pyrogenic oxides show poor high-field properties, but nitridation and reoxidation improves them considerably. In fact, the high-field performance of reoxidized nitrided pyrogenic oxides is even superior to that of dry oxides. Our results indicate that improvement occurs due to inhibition of hydrogen drift.|
|Appears in Collections:||Article|
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.