DSpace
 

DSpace at IIT Bombay >
IITB Publications >
Article >

Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/10838

Title: FAULT TOLERANCE IN N-MOS RANDOM-ACCESS MEMORIES WITH DYNAMIC REDUNDANCY METHODS
Authors: NAIDU, RV
MAHAPATRA, S
Issue Date: 1988
Publisher: PERGAMON-ELSEVIER SCIENCE LTD
Citation: MICROELECTRONICS AND RELIABILITY, 28(2), 193-200
URI: http://dx.doi.org/10.1016/0026-2714(88)90350-2
http://dspace.library.iitb.ac.in/xmlui/handle/10054/10838
http://hdl.handle.net/10054/10838
ISSN: 0026-2714
Appears in Collections:Article

Files in This Item:

There are no files associated with this item.

View Statistics

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

 

Valid XHTML 1.0! DSpace Software Copyright © 2002-2010  Duraspace - Feedback