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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/10758

Title: Effect of post-growth rapid thermal annealing on bilayer InAs/GaAs quantum dot heterostructure grown with very thin spacer thickness
Authors: SENGUPTA, S
HALDER, N
CHAKRABARTI, S
Keywords: optical-properties
gaas
strain
laser
photoluminescence
interdiffusion
stability
layers
size
Issue Date: 2010
Publisher: PERGAMON-ELSEVIER SCIENCE LTD
Citation: MATERIALS RESEARCH BULLETIN, 45(11), 1593-1597
Abstract: We have investigated the effect of post-growth rapid thermal annealing on self-assembled InAs/GaAs bilayer quantum dot samples having very thin barrier thickness (7.5-8.5 nm). In/Ga interdiffusion in the samples due to annealing is presumed to be controlled by the vertical strain coupling from the seed dots in bilayer heterostructure. Strain coupling from embedded seed QD layer maintains a strain relaxed state in active top islands of the bilayer quantum dot sample grown with comparatively thick spacer layer (8.5 nm). This results in minimum In/Ga interdiffusion. However controlled interdiffusion across the interface between dots and GaAs barrier, noticeably enhances the emission efficiency in such bilayer quantum dot heterostructure on annealing up to 700 degrees C.
URI: http://dx.doi.org/10.1016/j.materresbull.2010.07.015
http://dspace.library.iitb.ac.in/xmlui/handle/10054/10758
http://hdl.handle.net/10054/10758
ISSN: 0025-5408
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