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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/10731

Title: Dissociation kinetics of molecular hydrogen in a microwave plasma and its influence on the hydrogen content in diamond films
Authors: SHARDA, T
MISRA, DS
AVASTHI, DK
MEHTA, GK
Keywords: chemical vapor-deposition
raman
cvd
Issue Date: 1996
Publisher: PERGAMON-ELSEVIER SCIENCE LTD
Citation: SOLID STATE COMMUNICATIONS, 98(10), 879-883
Abstract: Double probe measurements were performed in a microwave plasma at various hydrogen pressures. Electron temperature increases with the growth pressure. Electron density is determined to be 5.6, 7.2 and 8 x 10(11) cm(-3) within 20% accuracy, at 20, 40 and 70 Torr, respectively. The dissociation rate of hydrogen increases with pressure. Elastic recoil detection analysis was used to measure the relative H concentration in the films. The stress in the films changes systematically as the H content increases. We find that as 1 h H atom concentration in the plasma increases, the concentration of H in the films goes down. Copyright (C) 1996
URI: http://dx.doi.org/10.1016/0038-1098(96)00040-3
http://dspace.library.iitb.ac.in/xmlui/handle/10054/10731
http://hdl.handle.net/10054/10731
ISSN: 0038-1098
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