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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/10710

Title: Determination of electrical and solar cell parameters of FTO/CuPc/Al Schottky devices
Authors: RAJESH, KR
VARGHESE, S
MENON, CS
Keywords: photo-voltaic cells
copper phthalocyanine
photovoltaic cells
thin-films
diodes
temperature
dependence
injection
barrier
ito
Issue Date: 2007
Publisher: PERGAMON-ELSEVIER SCIENCE LTD
Citation: JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 68(4), 556-560
Abstract: A Schottky structure is fabricated using CuPc sandwiched between fluorinated tin oxide (FTO) and aluminium electrodes. The electrical properties of the device are measured at room temperature. Permittivity of the device is calculated from capacitance measurements. The saturation current density, J(0) = 5.1 X 10(-4) (Amp/m(2)), diode ideality factor, n = 3.02 and barrier height, (P = 0.84 eV are determined for the Schottky juction. Reverse bias In J versus In V-1/2 is interpreted in terms of Schottky emission. Solar cell parameters are determined from the J V characteristics. Power conversion efficiency, eta of 0.0024% is obtained for the cell. Band gap energy of the material is determined from UV-visible absorption spectrum. (c) 2007
URI: http://dx.doi.org/10.1016/j.jpcs.2007.01.023
http://dspace.library.iitb.ac.in/xmlui/handle/10054/10710
http://hdl.handle.net/10054/10710
ISSN: 0022-3697
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