COMPUTATIONAL MODELING OF NANOSTRUCTURED POROUS SILICON

Abstract

The finite diffusion length model generates patterns which are similar to the nanostructural features in porous silicon formed by electrochemical anodizing. The simulated patterns have a neatly constant density away from the interface regions. The variation of number of particles with distance is linear on a double log plot, in the regions away from interfaces. We report that the estimation of the width of the active region between the porous and the bulk lattice can be made by observing the transition from a region of constant slope to a region of zero dope on the log-log plot of number of aggregating particles versus distance.