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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/10405

Title: A detailed experimental investigation of impact ionization in n-channel metal-oxide-semiconductor field-effect-transistors at very low drain voltages
Authors: ANIL, KG
MAHAPATRA, S
EISELE, I
Keywords: electron-electron interaction
mosfets
Issue Date: 2003
Publisher: PERGAMON-ELSEVIER SCIENCE LTD
Citation: SOLID-STATE ELECTRONICS, 47(6), 995-1001
Abstract: A detailed experimental investigation of impact ionization in n-channel metal-oxide-semiconductor field-effect-transistors (n-MOSFET) for drain voltages close to and below the bandgap voltage is presented. The data is analyzed based on recent full-band Monte-Carlo results available in the literature. It is shown that the broadening of the tail of the electron energy distribution (EED) by electron-electron interactions (EEI) has an observable impact on hot-electron effects of n-MOSFETs of gate length of even 5 mum. Impacts of channel length scaling and gate voltage on the broadening of EED tail by EEI are also examined, and a model to explain the observed dependencies has been proposed. (C) 2003 . .
URI: http://dx.doi.org/10.1016/S0038-1101(02)00458-6
http://dspace.library.iitb.ac.in/xmlui/handle/10054/10405
http://hdl.handle.net/10054/10405
ISSN: 0038-1101
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