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|Title:||A detailed experimental investigation of impact ionization in n-channel metal-oxide-semiconductor field-effect-transistors at very low drain voltages|
|Publisher:||PERGAMON-ELSEVIER SCIENCE LTD|
|Citation:||SOLID-STATE ELECTRONICS, 47(6), 995-1001|
|Abstract:||A detailed experimental investigation of impact ionization in n-channel metal-oxide-semiconductor field-effect-transistors (n-MOSFET) for drain voltages close to and below the bandgap voltage is presented. The data is analyzed based on recent full-band Monte-Carlo results available in the literature. It is shown that the broadening of the tail of the electron energy distribution (EED) by electron-electron interactions (EEI) has an observable impact on hot-electron effects of n-MOSFETs of gate length of even 5 mum. Impacts of channel length scaling and gate voltage on the broadening of EED tail by EEI are also examined, and a model to explain the observed dependencies has been proposed. (C) 2003 . .|
|Appears in Collections:||Article|
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