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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/10400

Title: A comprehensive model of PMOS NBTI degradation
Authors: ALAM, MA
MAHAPATRA, S
Keywords: bias-temperature-instability
si-sio2 interface
silicon
diffusion
mechanism
stress
Issue Date: 2005
Publisher: PERGAMON-ELSEVIER SCIENCE LTD
Citation: MICROELECTRONICS RELIABILITY, 45(1), 71-81
Abstract: Negative bias temperature instability has become an important reliability concern for ultra-scaled Silicon IC technology with significant implications for both analog and digital circuit design. In this paper, we construct a comprehensive model for NBTI phenomena within the framework of the standard reaction-diffusion model. We demonstrate how to solve the reaction-diffusion equations in a way that emphasizes the physical aspects of the degradation process and allows easy generalization of the existing work. We also augment this basic reaction-diffusion model by including the temperature and field-dependence of the NBTI phenomena so that reliability projections can be made under arbitrary circuit operating conditions. (C) 2004 Elsevier Ltd.
URI: http://dx.doi.org/10.1016/j.microrel.2004.03.019
http://dspace.library.iitb.ac.in/xmlui/handle/10054/10400
http://hdl.handle.net/10054/10400
ISSN: 0026-2714
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