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|Title:||A comprehensive model of PMOS NBTI degradation|
|Publisher:||PERGAMON-ELSEVIER SCIENCE LTD|
|Citation:||MICROELECTRONICS RELIABILITY, 45(1), 71-81|
|Abstract:||Negative bias temperature instability has become an important reliability concern for ultra-scaled Silicon IC technology with significant implications for both analog and digital circuit design. In this paper, we construct a comprehensive model for NBTI phenomena within the framework of the standard reaction-diffusion model. We demonstrate how to solve the reaction-diffusion equations in a way that emphasizes the physical aspects of the degradation process and allows easy generalization of the existing work. We also augment this basic reaction-diffusion model by including the temperature and field-dependence of the NBTI phenomena so that reliability projections can be made under arbitrary circuit operating conditions. (C) 2004 Elsevier Ltd.|
|Appears in Collections:||Article|
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