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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/10399

Title: A comprehensive model for PMOS NBTI degradation: Recent progress
Authors: ALAM, MA
KUFLUOGLU, H
VARGHESE, D
MAHAPATRA, S
Keywords: bias temperature instability
trap generation
physical-mechanisms
mos-transistors
interface
silicon
mosfets
recovery
stress
impact
Issue Date: 2007
Publisher: PERGAMON-ELSEVIER SCIENCE LTD
Citation: MICROELECTRONICS RELIABILITY, 47(6), 853-862
Abstract: Negative bias temperature instability (NBTI) is a well-known reliability concern for PMOS transistors. We review the literature to find seven key experimental features of NBT1 degradation. These features appear mutually inconsistent and have often defied easy interpretation. By reformulating the Reaction-Diffusion model in a particularly simple form, we show that these seven apparently contradictory features of NBTI actually reflect different facets of the same underlying physical mechanism. (c) 2006
URI: http://dx.doi.org/10.1016/j.microrel.2006.10.012
http://dspace.library.iitb.ac.in/xmlui/handle/10054/10399
http://hdl.handle.net/10054/10399
ISSN: 0026-2714
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