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|Title: ||A comprehensive model for PMOS NBTI degradation: Recent progress|
|Authors: ||ALAM, MA|
|Keywords: ||bias temperature instability|
|Issue Date: ||2007|
|Publisher: ||PERGAMON-ELSEVIER SCIENCE LTD|
|Citation: ||MICROELECTRONICS RELIABILITY, 47(6), 853-862|
|Abstract: ||Negative bias temperature instability (NBTI) is a well-known reliability concern for PMOS transistors. We review the literature to find seven key experimental features of NBT1 degradation. These features appear mutually inconsistent and have often defied easy interpretation. By reformulating the Reaction-Diffusion model in a particularly simple form, we show that these seven apparently contradictory features of NBTI actually reflect different facets of the same underlying physical mechanism. (c) 2006|
|Appears in Collections:||Article|
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