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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/10389

Title: A CAD-compatible closed form approximation for the inversion charge areal density in double-gate MOSFETs
Authors: HARIHARAN, V
VASI, J
RAO, VR
Keywords: current model
dg mosfet
Issue Date: 2009
Publisher: PERGAMON-ELSEVIER SCIENCE LTD
Citation: SOLID-STATE ELECTRONICS, 53(2), 218-224
Abstract: In developing the drain current model of a symmetrically driven, undoped (or lightly doped) symmetric double-gate MOSFET (SDGFEr), one encounters a transcendental equation relating the value of an intermediate variable beta (which is related to the inversion charge areal density and also surface-potential) to the gate and drain voltages; as a result, it doesn't have a closed form solution. From a compact modeling perspective, it is desirable to have closed form expressions in order to implement them in a circuit simulator. In this paper, we present an accurate closed form approximation for the inversion charge areal density, based on the Lambert-W function. We benchmark our approximation against other existing approximations and show that our approximation is computationally the most efficient and numerically the most robust, at a reduced but acceptable accuracy. Hence, it is suitable for use in implementing inversion charge based compact models. (C) 2008
URI: http://dx.doi.org/10.1016/j.sse.2008.11.006
http://dspace.library.iitb.ac.in/xmlui/handle/10054/10389
http://hdl.handle.net/10054/10389
ISSN: 0038-1101
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