DSpace
 

DSpace at IIT Bombay >
IITB Publications >
Article >

Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/101

Title: Drain disturb during CHISEL programming of NOR flash EEPROMs-physical mechanisms and impact of technological parameters
Authors: MAHAPATRA, S
NAIR, DR
SHUKURI, S
BUDE, JD
Keywords: computer simulation
electron tunneling
monte carlo methods
electrons
Issue Date: 2004
Publisher: IEEE
Citation: IEEE Transactions on Electron Devices 51(5), 701-07
Abstract: The origin of drain disturb in NOR Flash EEPROM cells under channel initiated secondary electron (CHISEL) programming operation is identified. A comparative study of drain disturb under channel hot electron (CHE) and CHISEL operation is performed as a function of drain bias and temperature on bitcells having different floating gate length and junction depth. The disturb mechanism is shown to originate from band-to-band tunneling under CHISEL operation, unlike that under CHE operation that originates from source-drain leakage. The effect of technological parameters (channel doping and drain junction depth) on CHISEL drain disturb is studied for both the charge gain (erased cell) and charge loss (programmed cell) disturb modes. Fullband Monte Carlo device simulations are used to explain the experimental results. It is shown that methods for improving CHISEL programming performance (higher channel doping and/or lower drain junction depth or halo) increase drain disturb, which has to be carefully considered for efficient design of scaled cells.
URI: http://dx.doi.org/10.1109/TED.2004.825821
http://hdl.handle.net/10054/101
http://dspace.library.iitb.ac.in/xmlui/handle/10054/101
ISSN: 0018-9383
Appears in Collections:Article

Files in This Item:

File Description SizeFormat
28966339.29 kBUnknownView/Open
View Statistics

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

 

Valid XHTML 1.0! DSpace Software Copyright © 2002-2010  Duraspace - Feedback