Chemical vapor deposition precursors for high dielectric oxides: zirconium and hafnium oxide

Abstract

High dielectric oxides namely ZrO2 and HfO2 have gained a lot of importance as they are candidates in the electronic industry in the form of CMOS technology. A complete review of the literature examples of the precursors employed in the deposition of the thin films of these metal oxides, followed by methodology to design precursors with desirable physicochemical properties have been described in this review article.