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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/100/3023

Title: Chemical vapor deposition precursors for high dielectric oxides: zirconium and hafnium oxide
Authors: WALAWALKAR, MG
KOTTANTHARAYIL, A
RAO, VR
Keywords: cvd precursors
hafnia
high dialectric oxides
oxide precursors
zirconia
Issue Date: 2009
Publisher: TAYLOR & FRANCIS INC
Citation: SYNTHESIS AND REACTIVITY IN INORGANIC METAL-ORGANIC AND NANO-METAL CHEMISTRY,39(6)331-340
Abstract: High dielectric oxides namely ZrO2 and HfO2 have gained a lot of importance as they are candidates in the electronic industry in the form of CMOS technology. A complete review of the literature examples of the precursors employed in the deposition of the thin films of these metal oxides, followed by methodology to design precursors with desirable physicochemical properties have been described in this review article.
URI: http://dx.doi.org/10.1080/15533170903094964
http://dspace.library.iitb.ac.in/xmlui/handle/10054/13785
http://hdl.handle.net/100/3023
ISSN: 1553-3174
Appears in Collections:Review

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