DSpace
 

DSpace at IIT Bombay >
IITB Publications >
Proceedings papers >

Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/100/2677

Title: Understanding the NBTI degradation in halo-doped channel p-MOSFETs
Authors: JHA, NK
RAO, VR
Keywords: bias-temperature instability
Issue Date: 2004
Publisher: IEEE
Citation: IPFA 2004: PROCEEDINGS OF THE 11TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS,311-314
Abstract: Role of initial interface damage for NBTI degradation has been examined for short channel MOSFET devices. In this paper we present a detailed study of the role of initial silicon-oxide interface quality on the NBTI degradation. Hole density and oxide fields are important parameters responsible for NBTI degradation. Our results show that NBTI degradation is independent of initial interface quality.
URI: http://dspace.library.iitb.ac.in/xmlui/handle/10054/16089
http://hdl.handle.net/100/2677
ISBN: 0-7803-8454-7
Appears in Collections:Proceedings papers

Files in This Item:

There are no files associated with this item.

View Statistics

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

 

Valid XHTML 1.0! DSpace Software Copyright © 2002-2010  Duraspace - Feedback