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|Title:||Understanding the NBTI degradation in halo-doped channel p-MOSFETs|
|Citation:||IPFA 2004: PROCEEDINGS OF THE 11TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS,311-314|
|Abstract:||Role of initial interface damage for NBTI degradation has been examined for short channel MOSFET devices. In this paper we present a detailed study of the role of initial silicon-oxide interface quality on the NBTI degradation. Hole density and oxide fields are important parameters responsible for NBTI degradation. Our results show that NBTI degradation is independent of initial interface quality.|
|Appears in Collections:||Proceedings papers|
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