Electron diffraction study of pulsed laser deposited thin films using a YIG target

Abstract

Thin films, pulsed laser deposited (PLD) on Si (100) substrates, from yttrium iron garnet (YIG) target were studied using electron diffraction and X-ray diffraction (XRD). The films were deposited at various deposition temperatures (T-S, 873-1123 K) for this study. For another set of films, films were deposited at ambient temperature and annealed ex-situ (T,, 873-1123 K). It was found that both YIG and orthoferrite (YfeO(3)) phases are present in the films deposited at T, of 873-1023 K. While films deposited at a T-S, of 1073-1123 K show pure YIG phase. The films, which were ex-situ annealed have only orthoferrite phase.