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|Title:||A study of NBTI in HfSiON/TiN p-MOSFETs using ultra-fast on-the-fly (UF-OTF) I(DLIN) technique|
|Citation:||IPFA 2008: PROCEEDINGS OF THE 15TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS,264-267|
|Abstract:||Negative Bias Temperature Instability (NBTI) is studied in HfSiON/TiN p-MOSFETs having thin (2nm) and thick (3nm) HfSiON layer on top of 1nm SiO(2) interfacial layer. By using ultra fast on the fly I(DLIN) technique, the impact of stress temperature (T) and oxide field (E(ox)) on NBTI time evolution is studied. The thickness of the HfSiON layer is shown to have negligible impact on time, T and Eox dependence of NBTI. The impact of time-zero (t(0)) delay on power law time exponent (n), E(ox) acceleration (Gamma) of degradation and E(ox) acceleration (beta) of time to fail (tt(F)) is also studied. The t(0) does not impact Gamma but strongly impacts n, beta and hence extracted safe operating voltage (V(GSAFE)).|
|Appears in Collections:||Proceedings papers|
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