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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/100/2536

Title: The impact of gate dielectric nitridation methodology on NBTI of SiON p-MOSFETs as studied by UF-OTF technique
Authors: MAHETA, VD
OLSEN, C
AHMED, K
MAHAPATRA, S
Keywords: bias temperature instability
trap generation
interface
Issue Date: 2008
Publisher: IEEE
Citation: IPFA 2008: PROCEEDINGS OF THE 15TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS,255-259
Abstract: The impact of gate dielectric nitridation methodology on time, temperature and field dependence of NBTI in SiON pMOSFETs is studied using Ultra-Fast On-The-Fly I(DLIN) technique with 1 mu s resolution. It is shown that PNO devices with proper PNA show lower degradation magnitude, higher field dependence and therefore higher safe operating voltage compared to RTNO and PNO devices with improper PNA despite atomic N% is higher in PNO devices with proper PNA.
URI: http://dspace.library.iitb.ac.in/xmlui/handle/10054/15848
http://hdl.handle.net/100/2536
ISBN: 978-1-4244-2039-1
Appears in Collections:Proceedings papers

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