Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/xmlui/handle/100/2523
Title: A comprehensive study of flicker noise in plasma nitrided SiON p-MOSFETs : process dependence of pre-existing and NBTI stress generated trap distribution profiles
Authors: KAPILA, G
GOYAL, N
MAHETA, VD
OLSEN, C
AHMED, K
MAHAPATRA, S
Issue Date: 2008
Publisher: IEEE
Citation: IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2008, TECHNICAL DIGEST,103-106
Abstract: Flicker noise is studied in SiON p-MOSFETs before and after NBTI stress. Pre-stress noise magnitude and slope are correlated and used to verify N density distribution in gate dielectric. Post-stress noise magnitude and slope are used to explore distribution of trap generation during NBTI stress, and independently verified by using MFCP measurements. Consequence of N distribution (in SiON) on NBTI stress and recovery results is shown.
URI: http://dspace.library.iitb.ac.in/xmlui/handle/10054/15835
http://hdl.handle.net/100/2523
ISBN: 978-1-4244-2377-4
Appears in Collections:Proceedings papers

Files in This Item:
File Description SizeFormat 
A comprehensive study of flicker .pdf275.42 kBAdobe PDFThumbnail
View/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.