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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/100/2500

Title: Sub-20 nm gate length FinFET design : can High-kappa spacers make a difference?
Authors: SACHID, AB
FRANCIS, R
BAGHINI, MS
SHARMA, DK
BACH, KH
MAHNKOPF, R
RAO, VR
Keywords: devices
Issue Date: 2008
Publisher: IEEE
Citation: IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2008, TECHNICAL DIGEST,697-700
Abstract: Sub-20 nm gate length FinFETs, are constrained by the very thin fin thickness (T(FIN)) necessary to maintain acceptable short-channel performance. For the 45 nm technology node and below, a novel device design methodology for undoped underlapped FinFETs with high-kappa spacers is presented to achieve higher circuit speed and SRAM cells with higher stability, lower leakage, faster access times and higher robustness to process variations compared to overlapped FinFETs. While comparing different FinFETs, we propose ON-current per fin as the parameter to be optimized instead of ON-current normalized to electrical width.
URI: http://dspace.library.iitb.ac.in/xmlui/handle/10054/15829
http://hdl.handle.net/100/2500
ISBN: 978-1-4244-2377-4
Appears in Collections:Proceedings papers

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