Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/xmlui/handle/100/2499
Title: Drain current model for undoped symmetric double-gate FETs using a velocity saturation model with exponent n=2
Authors: HARIHARAN, V
VASI, J
RAO, VR
Keywords: Dg Mosfet
Compact Model
Issue Date: 2007
Publisher: IEEE
Citation: 2007 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, VOLS 1 AND 2,138-139
URI: http://dspace.library.iitb.ac.in/xmlui/handle/10054/15949
http://hdl.handle.net/100/2499
ISBN: 978-1-4244-1891-6
Appears in Collections:Proceedings papers

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