DSpace at IIT Bombay >
IITB Publications >
Proceedings papers >
Please use this identifier to cite or link to this item:
|Title: ||Recent advances in charge trap flash memories|
|Authors: ||SANDHYA, C|
|Keywords: ||metal nanocrystal memories|
|Issue Date: ||2009|
|Citation: ||2009 2ND INTERNATIONAL WORKSHOP ON ELECTRON DEVICES AND SEMICONDUCTOR TECHNOLOGY,192-196|
|Abstract: ||This paper reviews recent advances in Charge Trap Flash (CTF) memories. CTFs are predicted to replace the traditional floating-gate flash devices beyond the 32 nm node. The paper focuses on work done at IIT Bombay in the areas of both nitride-based SONOS devices as well as nanocrystal (NC)-based devices. For SONOS devices, results are presented for optimization of the nitride layer to obtain the best characteristics, and the simulation of the program/erase transients. For NC devices, experimental characteristics of single and dual layer cells, as well as simulation results are presented.|
|Appears in Collections:||Proceedings papers|
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.