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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/100/2480

Title: Recent advances in charge trap flash memories
Authors: SANDHYA, C
SINGH, PK
GUPTA, S
ROHRA, H
SHIVATHEJA, M
GANGULY, U
HOFMANN, R
MUKHOPADHYAY, G
MAHAPATRA, S
VASI, J
Keywords: metal nanocrystal memories
performance
fabrication
device
program/erase
reliability
retention
operation
Issue Date: 2009
Publisher: IEEE
Citation: 2009 2ND INTERNATIONAL WORKSHOP ON ELECTRON DEVICES AND SEMICONDUCTOR TECHNOLOGY,192-196
Abstract: This paper reviews recent advances in Charge Trap Flash (CTF) memories. CTFs are predicted to replace the traditional floating-gate flash devices beyond the 32 nm node. The paper focuses on work done at IIT Bombay in the areas of both nitride-based SONOS devices as well as nanocrystal (NC)-based devices. For SONOS devices, results are presented for optimization of the nitride layer to obtain the best characteristics, and the simulation of the program/erase transients. For NC devices, experimental characteristics of single and dual layer cells, as well as simulation results are presented.
URI: http://dspace.library.iitb.ac.in/xmlui/handle/10054/15813
http://hdl.handle.net/100/2480
ISBN: 978-1-4244-3831-0
Appears in Collections:Proceedings papers

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