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|Title:||Highly robust nanoscale planar double-Gate MOSFET Device and SRAM cell immune to Gate-misalignment and process variations|
|Citation:||2009 2ND INTERNATIONAL WORKSHOP ON ELECTRON DEVICES AND SEMICONDUCTOR TECHNOLOGY,13-16|
|Abstract:||Gate misalignment and process variations are important challenges in sub-20 nm gate length planar double-gate (DG) MOSFET devices For the first time, we demonstrate a misalignment- and process variations-aware device optimization strategy for a DG-MOSFET Using underlaps and high-kappa offset-spacers, we show that the robustness of the device to gate misalignment and process variations can be improved. A standard 6T-SRAM cell designed using the optimized devices shows better read and hold static noise margins, and lower variations in SNM and leakage power compared to a conventional DG-MOSFET.|
|Appears in Collections:||Proceedings papers|
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