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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/100/2439

Title: Filament study of sti type drain extended nmos device using transient interferometric mapping
Authors: SHRIVASTAVA, M
BYCHIKHIN, S
POGANY, D
SCHNEIDER, J
BAGHINI, MS
GOSSNER, H
GORNIK, E
RAO, VR
Issue Date: 2009
Publisher: IEEE
Citation: 2009 IEEE INTERNATIONAL ELECTRON DEVICES MEETING,387-390
Abstract: We present filament behavior of STI type DeNMOS devices using detailed Transient Interferometric Mapping experiments and 3D TCAD simulations. Device behavior at different TLP currents is discussed. The impact of localized base-push-out, power dissipation because of space charge build-up, regenerative NPN action and various events during the current filamentation are explored. By uniform turn-on of the device during base push-out the failure current could be improved by more than 2X.
URI: http://dspace.library.iitb.ac.in/xmlui/handle/10054/15777
http://hdl.handle.net/100/2439
ISBN: 978-1-4244-5639-0
Appears in Collections:Proceedings papers

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