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|Title: ||Dual layer Pt metal nanocrystal flash for multi-level-cell NAND application|
|Authors: ||SINGH, PK|
|Issue Date: ||2009|
|Citation: ||2009 IEEE INTERNATIONAL MEMORY WORKSHOP,78-81|
|Abstract: ||Most of the current high-density Flash cells use multi-level-cell (MLC) technology to store 2-bits/cell to increase memory density. In this work, dual layer metal nanocrystal (NC) flash EEPROM device, with large memory window, good retention and 10(4) cycle endurance is reported. High-temperature retention, gate bias accelerated retention, read disturb and post-cycling retention measurements show excellent reliability of the NC devices which make them suitable for the MLC application.|
|Appears in Collections:||Proceedings papers|
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