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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/100/2437

Title: Dual layer Pt metal nanocrystal flash for multi-level-cell NAND application
Authors: SINGH, PK
BISHT, G
MAHAPATRA, S
HOFMANN, R
SINGH, K
Keywords: memory
Issue Date: 2009
Publisher: IEEE
Citation: 2009 IEEE INTERNATIONAL MEMORY WORKSHOP,78-81
Abstract: Most of the current high-density Flash cells use multi-level-cell (MLC) technology to store 2-bits/cell to increase memory density. In this work, dual layer metal nanocrystal (NC) flash EEPROM device, with large memory window, good retention and 10(4) cycle endurance is reported. High-temperature retention, gate bias accelerated retention, read disturb and post-cycling retention measurements show excellent reliability of the NC devices which make them suitable for the MLC application.
URI: http://dspace.library.iitb.ac.in/xmlui/handle/10054/15775
http://hdl.handle.net/100/2437
ISBN: 978-1-4244-3761-0
Appears in Collections:Proceedings papers

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