|
DSpace at IIT Bombay >
IITB Publications >
Proceedings papers >
Please use this identifier to cite or link to this item:
http://dspace.library.iitb.ac.in/jspui/handle/100/2437
|
| Title: | Dual layer Pt metal nanocrystal flash for multi-level-cell NAND application |
| Authors: | SINGH, PK
BISHT, G
MAHAPATRA, S
HOFMANN, R
SINGH, K |
| Keywords: | memory |
| Issue Date: | 2009 |
| Publisher: | IEEE |
| Citation: | 2009 IEEE INTERNATIONAL MEMORY WORKSHOP,78-81 |
| Abstract: | Most of the current high-density Flash cells use multi-level-cell (MLC) technology to store 2-bits/cell to increase memory density. In this work, dual layer metal nanocrystal (NC) flash EEPROM device, with large memory window, good retention and 10(4) cycle endurance is reported. High-temperature retention, gate bias accelerated retention, read disturb and post-cycling retention measurements show excellent reliability of the NC devices which make them suitable for the MLC application. |
| URI: | http://dspace.library.iitb.ac.in/xmlui/handle/10054/15775
http://hdl.handle.net/100/2437 |
| ISBN: | 978-1-4244-3761-0 |
| Appears in Collections: | Proceedings papers
|
Files in This Item:
There are no files associated with this item.
|
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
|
