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| Title: | Characterization of interface and oxide traps in Ge pMOSFETs based on DCIV technique |
| Authors: | MAJI, D
CRUPI, F
MAGNONE, P
GIUSI, G
PACE, C
SIMOEN, E
RAO, VR |
| Keywords: | transistors |
| Issue Date: | 2009 |
| Publisher: | IEEE |
| Citation: | 2009 2ND INTERNATIONAL WORKSHOP ON ELECTRON DEVICES AND SEMICONDUCTOR TECHNOLOGY,153-156 |
| Abstract: | The interface trap density of fresh TiN/TaN gated HfO(2)/SiO(2)/Si/cpi-Ge pMOSFETs is measured using the DCIV technique. Its temperature dependence is also discussed here. We observe a polarity dependent DCIV peak shift. The bias temperature stress induced interface trapped charge and oxide trapped charge shifts are also systematically investigated in this work. |
| URI: | http://dspace.library.iitb.ac.in/xmlui/handle/10054/15773
http://hdl.handle.net/100/2434 |
| ISBN: | 978-1-4244-3831-0 |
| Appears in Collections: | Proceedings papers
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