Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/xmlui/handle/100/2434
Title: Characterization of interface and oxide traps in Ge pMOSFETs based on DCIV technique
Authors: MAJI, D
CRUPI, F
MAGNONE, P
GIUSI, G
PACE, C
SIMOEN, E
RAO, VR
Keywords: Transistors
Issue Date: 2009
Publisher: IEEE
Citation: 2009 2ND INTERNATIONAL WORKSHOP ON ELECTRON DEVICES AND SEMICONDUCTOR TECHNOLOGY,153-156
Abstract: The interface trap density of fresh TiN/TaN gated HfO(2)/SiO(2)/Si/cpi-Ge pMOSFETs is measured using the DCIV technique. Its temperature dependence is also discussed here. We observe a polarity dependent DCIV peak shift. The bias temperature stress induced interface trapped charge and oxide trapped charge shifts are also systematically investigated in this work.
URI: http://dspace.library.iitb.ac.in/xmlui/handle/10054/15773
http://hdl.handle.net/100/2434
ISBN: 978-1-4244-3831-0
Appears in Collections:Proceedings papers

Files in This Item:
There are no files associated with this item.


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.