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|Title:||Characterization of interface and oxide traps in Ge pMOSFETs based on DCIV technique|
|Citation:||2009 2ND INTERNATIONAL WORKSHOP ON ELECTRON DEVICES AND SEMICONDUCTOR TECHNOLOGY,153-156|
|Abstract:||The interface trap density of fresh TiN/TaN gated HfO(2)/SiO(2)/Si/cpi-Ge pMOSFETs is measured using the DCIV technique. Its temperature dependence is also discussed here. We observe a polarity dependent DCIV peak shift. The bias temperature stress induced interface trapped charge and oxide trapped charge shifts are also systematically investigated in this work.|
|Appears in Collections:||Proceedings papers|
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