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|Title: ||Benchmarking the device performance at SUB 22 NM node technologies using an SOC framework|
|Authors: ||SHRIVASTAVA, M|
|Issue Date: ||2009|
|Citation: ||2009 IEEE INTERNATIONAL ELECTRON DEVICES MEETING,471-474|
|Abstract: ||For the first time this paper makes an attempt at predicting the System-on-Chip (SoC) performance (i.e. logic, SRAM, ESD and I/O) of various sub 20 nm channel length planar and non-planar SOI devices using extensive & well calibrated 3D device and mixed-mode TCAD simulations. It has been shown that the non-planar devices such as FinFETs are not the ideal choice for SoC applications and perform poorly in comparison to the Ultra thin body (UTB) planar SOT MOSFETs. We further show different strategies to optimize the planar UTB MOSFETs for improved ESD robustness and I/O performance.|
|Appears in Collections:||Proceedings papers|
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