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|Title: ||Hydroxy-phenyl Zn(II) Porphyrin self-assembled monolayer as a diffusion barrier for copper-low k interconnect technology|
|Authors: ||ROY, U|
|Issue Date: ||2009|
|Citation: ||2009 2ND INTERNATIONAL WORKSHOP ON ELECTRON DEVICES AND SEMICONDUCTOR TECHNOLOGY,36-40|
|Abstract: ||In this paper, we have studied the application of metallated porphyrin self-assembled monolayer (SAM) as a copper diffusion barrier for low-k inter-metal dielectric (IMD) CMOS technologies. SAM formed on hydrogen silesquioxane (HSQ), which is a low-k dielectric, has been demonstrated to be effective in preventing diffusion of copper ions into the porous dielectric. This has been shown by fabricating Cu-HSQ-Si and Cu-SAM-HSQ-Si metal-insulator-semiconductor test structures. Bias-temperature stress (BTS) studies have been done to investigate the effectiveness of SAM as a diffusion barrier. Formation of SAM on HSQ has been characterized using Fourier Transform Infra-red Spectroscopy studies Thermogravimetric analysis (TGA) of hydroxyl-phenyl Zn(II) porphyrin has been used to verify thermal stability of the molecule under back-end-of-line (BEOL) process conditions.|
|Appears in Collections:||Proceedings papers|
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