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|Title: ||Influence of SiN composition on program and erase characteristics of SANOS-type flash memories|
|Authors: ||SANDHYA, C|
|Issue Date: ||2009|
|Citation: ||2009 2ND INTERNATIONAL WORKSHOP ON ELECTRON DEVICES AND SEMICONDUCTOR TECHNOLOGY,41-44|
|Abstract: ||Composition of the silicon-nitride charge trap layer strongly impacts electron and hole trap properties. This significantly impacts charge trap flash memory performance and reliability. Important trade-offs between Program/Erase (P/E) levels (memory window) and retention loss is shown and critical trends identified. Increasing the Si-richness of the SiN layer improves memory window by increasing erase efficiency. E-state retention characteristics are improved but at the expense of higher P-state retention loss.|
|Appears in Collections:||Proceedings papers|
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