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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/100/2412

Title: Influence of SiN composition on program and erase characteristics of SANOS-type flash memories
Authors: SANDHYA, C
GANGULY, U
APOORVA, B
OLSEN, C
SEUTTER, S
DATE, L
HUNG, R
VASI, J
MAHAPATRA, S
Keywords: elevated-temperatures
mnos structures
discharge
reliability
performance
devices
model
Issue Date: 2009
Publisher: IEEE
Citation: 2009 2ND INTERNATIONAL WORKSHOP ON ELECTRON DEVICES AND SEMICONDUCTOR TECHNOLOGY,41-44
Abstract: Composition of the silicon-nitride charge trap layer strongly impacts electron and hole trap properties. This significantly impacts charge trap flash memory performance and reliability. Important trade-offs between Program/Erase (P/E) levels (memory window) and retention loss is shown and critical trends identified. Increasing the Si-richness of the SiN layer improves memory window by increasing erase efficiency. E-state retention characteristics are improved but at the expense of higher P-state retention loss.
URI: http://dspace.library.iitb.ac.in/xmlui/handle/10054/15754
http://hdl.handle.net/100/2412
ISBN: 978-1-4244-3831-0
Appears in Collections:Proceedings papers

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