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|Title:||Characterization of multiferroic thin films directly deposited on silicon for novel device applications|
|Citation:||INEC: 2010 3RD INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1 AND 2,900-901|
|Abstract:||we have investigated the multiferroic and dielectric properties in Dy modified BiFeO(3) thin films deposited directly on silicon using pulsed laser deposition (PLD) technique. The results support the usability of these films in multiferroic based MEMS devices as well as gate dielectrics for future CMOS applications.|
|Appears in Collections:||Proceedings papers|
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