DSpace
 

DSpace at IIT Bombay >
IITB Publications >
Proceedings papers >

Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/100/2311

Title: Parameter extraction for MOS model 11 using particle swarm optimization
Authors: CHOPDE, AM
KHANDELWAL, S
THAKKER, RA
PATIL, MB
ANIL, KG
Issue Date: 2007
Publisher: IEEE
Citation: PROCEEDINGS OF THE 2007 INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES: IWPSD-2007,253-256
Abstract: Efficient DC parameter extraction technique for MOS Model 11, level 1100 (MM11) is outlined. The parameters are extracted step-by-step depending upon the characteristics where they play a major role. We have used Particle Swarm Optimization (PSO) and Genetic Algorithm (GA) to extract parameters for NMOS device with 65 nm technology. To the best of the authors knowledge, this is the first application of PSO algorithm for MOSFET parameter extraction. It has been observed that PSO algorithm performs much better as compared to GA in terms of accuracy and consistency. The proposed extraction strategy has been verified for the same technology for 150 nm and 90 nm devices.
URI: http://dspace.library.iitb.ac.in/xmlui/handle/10054/15905
http://hdl.handle.net/100/2311
ISBN: 978-1-4244-1727-8
Appears in Collections:Proceedings papers

Files in This Item:

There are no files associated with this item.

View Statistics

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

 

Valid XHTML 1.0! DSpace Software Copyright © 2002-2010  Duraspace - Feedback