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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/100/2310

Title: On the differences between 3D filamentation and failure of N & P type drain extended MOS devices under ESD condition
Authors: SHRIVASTAVA, M
BYCHIKHIN, S
POGANY, D
SCHNEIDER, J
BAGHINI, MS
GOSSNER, H
GORNIK, E
RAO, VR
Issue Date: 2010
Publisher: IEEE
Citation: 2010 INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM,480-484
Abstract: We present differences in the ESD failure mechanisms, intrinsic behavior and various phases of filamentation of STI type DeNMOS and DePMOS devices using detailed 3D TCAD simulations, TLP and TIM experiments. The impact of localized base-push-out, power dissipation because of space charge build-up, regenerative bipolar triggering and various events during the current filamentation are compared. Measurements show that the absence of base push out in DePMOS device leads to similar to 2.5X higher I(T2) as compared to DeNMOS.
URI: http://dx.doi.org/10.1109/IRPS.2010.5488785
http://dspace.library.iitb.ac.in/xmlui/handle/10054/15537
http://hdl.handle.net/100/2310
ISBN: 978-1-4244-5431-0
Appears in Collections:Proceedings papers

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