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|Title:||On the failure mechanism and current instabilities in RESURF type DeNMOS device under ESD conditions|
|Citation:||2010 INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM,841-845|
|Abstract:||We present 3D device modeling of RESURF or non-STI type DeNMOS device under ESD conditions. The impact of base push-out, pulse-to-pulse instability and electrical imbalance on the various phases of filamentation is discussed. A new phenomenon called "week NPN action" and the cause of early and fast failure is identified. A modification of the device is proposed which achieved an improvement of similar to 5X in failure threshold (I(T2)) and similar to 2X in ESD window without degrading its I/O performance.|
|Appears in Collections:||Proceedings papers|
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