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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/100/2309

Title: On the failure mechanism and current instabilities in RESURF type DeNMOS device under ESD conditions
Authors: SHRIVASTAVA, M
SCHNEIDER, J
BAGHINI, MS
GOSSNER, H
RAO, VR
Keywords: cmos technologies
nmos
behavior
Issue Date: 2010
Publisher: IEEE
Citation: 2010 INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM,841-845
Abstract: We present 3D device modeling of RESURF or non-STI type DeNMOS device under ESD conditions. The impact of base push-out, pulse-to-pulse instability and electrical imbalance on the various phases of filamentation is discussed. A new phenomenon called "week NPN action" and the cause of early and fast failure is identified. A modification of the device is proposed which achieved an improvement of similar to 5X in failure threshold (I(T2)) and similar to 2X in ESD window without degrading its I/O performance.
URI: http://dx.doi.org/10.1109/IRPS.2010.5488723
http://dspace.library.iitb.ac.in/xmlui/handle/10054/15536
http://hdl.handle.net/100/2309
ISBN: 978-1-4244-5431-0
Appears in Collections:Proceedings papers

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