DSpace at IIT Bombay >
IITB Publications >
Proceedings papers >
Please use this identifier to cite or link to this item:
|Title: ||On the failure mechanism and current instabilities in RESURF type DeNMOS device under ESD conditions|
|Authors: ||SHRIVASTAVA, M|
|Keywords: ||cmos technologies|
|Issue Date: ||2010|
|Citation: ||2010 INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM,841-845|
|Abstract: ||We present 3D device modeling of RESURF or non-STI type DeNMOS device under ESD conditions. The impact of base push-out, pulse-to-pulse instability and electrical imbalance on the various phases of filamentation is discussed. A new phenomenon called "week NPN action" and the cause of early and fast failure is identified. A modification of the device is proposed which achieved an improvement of similar to 5X in failure threshold (I(T2)) and similar to 2X in ESD window without degrading its I/O performance.|
|Appears in Collections:||Proceedings papers|
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.