DSpace
 

DSpace at IIT Bombay >
IITB Publications >
Proceedings papers >

Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/100/2306

Title: NBTI lifetime prediction in SiON p-MOSFETs by H/H2 Reaction-Diffusion(RD) and Dispersive hole trapping model
Authors: DEORA, S
MAHETA, VD
MAHAPATRA, S
Keywords: bias temperature instability
i-dlin technique
interface-trap
material dependence
physical-mechanism
degradation
generation
stress
methodology
diffusion
Issue Date: 2010
Publisher: IEEE
Citation: 2010 INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM,1105-1114
Abstract: I(DLIN) shift due to NBTI is measured using UF-OTF I(DLIN) method in PNO, RTNO and RTNO+PN SiON p-MOSFETs having a wide range of EOT and %N. Time evolution of IDLIN shift at different stress E(OX) and T is modeled from ultra-short to long stress time using non-dispersive H/H(2) RD model governed N(IT) and dispersive N(h) components. N(IT) and N(h) model parameters show consistent E(OX) and T dependent behavior across all devices. Finally, extrapolated tt(F) values are obtained for different E(OX) from conventional power-law fit and the proposed model, and are compared across different measurement delay. Inconsistencies associated with conventional power-law fit extrapolation method are highlighted, which justifies the use of proposed model.
URI: http://dx.doi.org/10.1109/IRPS.2010.5488665
http://dspace.library.iitb.ac.in/xmlui/handle/10054/15534
http://hdl.handle.net/100/2306
ISBN: 978-1-4244-5431-0
Appears in Collections:Proceedings papers

Files in This Item:

There are no files associated with this item.

View Statistics

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

 

Valid XHTML 1.0! DSpace Software Copyright © 2002-2010  Duraspace - Feedback