Please use this identifier to cite or link to this item:
|Title:||NBTI lifetime prediction in SiON p-MOSFETs by H/H2 Reaction-Diffusion(RD) and Dispersive hole trapping model|
|Keywords:||Bias Temperature Instability|
|Citation:||2010 INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM,1105-1114|
|Abstract:||I(DLIN) shift due to NBTI is measured using UF-OTF I(DLIN) method in PNO, RTNO and RTNO+PN SiON p-MOSFETs having a wide range of EOT and %N. Time evolution of IDLIN shift at different stress E(OX) and T is modeled from ultra-short to long stress time using non-dispersive H/H(2) RD model governed N(IT) and dispersive N(h) components. N(IT) and N(h) model parameters show consistent E(OX) and T dependent behavior across all devices. Finally, extrapolated tt(F) values are obtained for different E(OX) from conventional power-law fit and the proposed model, and are compared across different measurement delay. Inconsistencies associated with conventional power-law fit extrapolation method are highlighted, which justifies the use of proposed model.|
|Appears in Collections:||Proceedings papers|
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.