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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/100/2305

Title: Highly resistive body STI Ndemos : an optimized demos device to achieve moving current filaments for robust ESD protection
Authors: SHRIVASTAVA, M
SCHNEIDER, J
BAGHINI, MS
GOSSNER, H
RAO, VR
Issue Date: 2009
Publisher: IEEE
Citation: 2009 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, VOLS 1 AND 2,754-759
Abstract: A novel DeMOS device with modified body and source region in grounded gate (gg) NMOS configuration for ESD protection is proposed. Detailed 3D simulations indicate a high failure threshold because of moving current filaments and self-protection from gate oxide breakdown, even for fast transients. A detailed physics of second basepushout and moving filaments is discussed
URI: http://dx.doi.org/10.1109/IRPS.2009.5173344
http://dspace.library.iitb.ac.in/xmlui/handle/10054/15533
http://hdl.handle.net/100/2305
ISBN: 978-1-4244-2888-5
Appears in Collections:Proceedings papers

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