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|Title: ||A new physical insight and 3D device modeling of sti type denmos device failure under ESD conditions|
|Authors: ||SHRIVASTAVA, M|
|Issue Date: ||2009|
|Citation: ||2009 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, VOLS 1 AND 2,669-675|
|Abstract: ||We present experimental and simulation studies of STI type DeNMOS devices under ESD conditions. The impact of base-push-out, power dissipation because of space charge build-up and, regenerative NPN action, on the various phases of filamentation and the final thermal runaway is discussed. A modification of the device layout is proposed to achieve an improvement (similar to 2X) infailure threshold (I(T2)).|
|Appears in Collections:||Proceedings papers|
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