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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/100/2304

Title: A new physical insight and 3D device modeling of sti type denmos device failure under ESD conditions
Authors: SHRIVASTAVA, M
SCHNEIDER, J
BAGHINI, MS
GOSSNER, H
RAO, VR
Issue Date: 2009
Publisher: IEEE
Citation: 2009 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, VOLS 1 AND 2,669-675
Abstract: We present experimental and simulation studies of STI type DeNMOS devices under ESD conditions. The impact of base-push-out, power dissipation because of space charge build-up and, regenerative NPN action, on the various phases of filamentation and the final thermal runaway is discussed. A modification of the device layout is proposed to achieve an improvement (similar to 2X) infailure threshold (I(T2)).
URI: http://dx.doi.org/10.1109/IRPS.2009.5173327
http://dspace.library.iitb.ac.in/xmlui/handle/10054/15532
http://hdl.handle.net/100/2304
ISBN: 978-1-4244-2888-5
Appears in Collections:Proceedings papers

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