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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/100/2295

Title: On the physical mechanism of NBTI in silicon oxynitride p-MOSFETs: can differences in insulator processing conditions resolve the interface trap generation versus hole trapping controversy?
Authors: MAHAPATRA, S
AHMED, K
VARGHESE, D
ISLAM, AE
GUPTA, G
MADHAV, L
SAHA, D
ALAM, MA
Keywords: bias temperature instability
thin-films
degradation
impact
model
Issue Date: 2007
Publisher: IEEE
Citation: 2007 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 45TH ANNUAL,1-9
Abstract: Negative Bias Temperature Instability (NBTI) is studied in plasma (PNO) and thermal (TNO) Si-oxynitride devices having varying EOT. Threshold voltage shift (Delta V(T)) and its field (E(OX)), temperature (T) and time (t) dependencies obtained from no-delay on-the-fly linear drain current (I(DLIN)) measurements are carefully compared to that obtained from Charge Pumping (CP). It is shown that thin and thick PNO and thin TNO devices show very similar NBTI behavior, which can primarily be attributed to generation of interface traps (Delta N(IT)). Thicker TNO devices show different NBTI behavior, and can be attributed to additional contribution from hole trapping (Delta N(h)) in pre-existing bulk traps. A physics based model is developed to explain the experimental results.
URI: http://dx.doi.org/10.1109/IPDPS.2007.370658
http://dspace.library.iitb.ac.in/xmlui/handle/10054/15522
http://hdl.handle.net/100/2295
ISBN: 978-1-4244-0918-1
Appears in Collections:Proceedings papers

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