Extensive reliability analysis of Tungsten dot NC devices embedded in HfAlO high-k dielectric under NAND (FN/FN) operation

Abstract

In this work we present an extensive reliability and performance evaluation of Tungsten dot Nanocrystal (NC) devices under NAND mode of operation. Improvement in performance and reliability was observed with scaling W and L. The use of better high-k processing is proposed to improve the reliability. We also propose a numerical simulation model for NC memory devices using transient capacitive charging model. The approach is very generic and computationally less extensive than the previous works.