DSpace
 

DSpace at IIT Bombay >
IITB Publications >
Proceedings papers >

Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/100/2292

Title: Extensive reliability analysis of Tungsten dot NC devices embedded in HfAlO high-k dielectric under NAND (FN/FN) operation
Authors: SINGH, PK
NAINANI, A
Keywords: metal nanocrystal memories
fabrication
Issue Date: 2007
Publisher: IEEE
Citation: IPFA 2007: PROCEEDINGS OF THE 14TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS,197-201
Abstract: In this work we present an extensive reliability and performance evaluation of Tungsten dot Nanocrystal (NC) devices under NAND mode of operation. Improvement in performance and reliability was observed with scaling W and L. The use of better high-k processing is proposed to improve the reliability. We also propose a numerical simulation model for NC memory devices using transient capacitive charging model. The approach is very generic and computationally less extensive than the previous works.
URI: http://dspace.library.iitb.ac.in/xmlui/handle/10054/15900
http://hdl.handle.net/100/2292
ISBN: 978-1-4244-1014-9
Appears in Collections:Proceedings papers

Files in This Item:

There are no files associated with this item.

View Statistics

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

 

Valid XHTML 1.0! DSpace Software Copyright © 2002-2010  Duraspace - Feedback