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|Title: ||Extensive reliability analysis of Tungsten dot NC devices embedded in HfAlO high-k dielectric under NAND (FN/FN) operation|
|Authors: ||SINGH, PK|
|Keywords: ||metal nanocrystal memories|
|Issue Date: ||2007|
|Citation: ||IPFA 2007: PROCEEDINGS OF THE 14TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS,197-201|
|Abstract: ||In this work we present an extensive reliability and performance evaluation of Tungsten dot Nanocrystal (NC) devices under NAND mode of operation. Improvement in performance and reliability was observed with scaling W and L. The use of better high-k processing is proposed to improve the reliability. We also propose a numerical simulation model for NC memory devices using transient capacitive charging model. The approach is very generic and computationally less extensive than the previous works.|
|Appears in Collections:||Proceedings papers|
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