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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/100/2271

Title: Parameter extraction for PSP MOSFET model using particle swarm optimization
Authors: THAKKER, RA
GANDHI, N
PATIL, MB
ANIL, KG
Issue Date: 2007
Publisher: IEEE
Citation: PROCEEDINGS OF THE 2007 INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES: IWPSD-2007,130-133
Abstract: This paper demonstrates the application of Particle Swarm Optimization (PSO) for parameter extraction of MOSFET model for the first time. Parameters are extracted for PSP MOS model for 65 nm technology NMOS devices. It has been shown that the performance of the PSO algorithm is better than the Genetic Algorithm (GA) in terms of accuracy and consistency.
URI: http://dspace.library.iitb.ac.in/xmlui/handle/10054/15897
http://hdl.handle.net/100/2271
ISBN: 978-1-4244-1727-8
Appears in Collections:Proceedings papers

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