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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/100/224

Title: Chemical treatment of photoluminescent porous silicon
Authors: VADJIKAR, RM
JAIN, B
GUPTA, PK
NANDEDKAR, RV
BHAWALKAR, DD
PATNI, MJ
SRINIVASA, R
CHANDORKAR, AN
Issue Date: 1994
Publisher: ELSEVIER SCIENCE SA LAUSANNE
Citation: MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,23(2)L13-L15
Abstract: Porous silicon layers formed by electrochemical anodizing show photoluminescence in the visible region. We report on the effect of chemical treatments such as hydrofluoric acid dip, ammonium fluoride solution treatment and boiling water treatment on the photoluminescence of porous silicon. In view of our results the mechanism of photoluminescence of porous silicon is discussed.
URI: http://dx.doi.org/10.1016/0921-5107(94)90350-6
http://dspace.library.iitb.ac.in/xmlui/handle/10054/14011
http://hdl.handle.net/100/224
ISSN: 0921-5107
Appears in Collections:Letter

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