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|Title: ||Development of a 3D simulator for metal Nanocrystal (NC) flash memories under NAND operation|
|Authors: ||NAINANI, A|
|Issue Date: ||2007|
|Citation: ||2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2,947-950|
|Abstract: ||A 3D simulator for metal Nanocrystal (NC) flash is developed and verified with published experimental data. The simulator is capable of extracting physical parameters and predicting their impact on cell performance. The simulator is used to optimize cell design and analyze performance with scaling, NC randomness and NC number fluctuations.|
|Appears in Collections:||Proceedings papers|
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