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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/100/2237

Title: Development of a 3D simulator for metal Nanocrystal (NC) flash memories under NAND operation
Authors: NAINANI, A
PALIT, S
SINGH, PK
GANGULY, U
KRISHNA, N
VASI, J
MAHAPATRA, S
Issue Date: 2007
Publisher: IEEE
Citation: 2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2,947-950
Abstract: A 3D simulator for metal Nanocrystal (NC) flash is developed and verified with published experimental data. The simulator is capable of extracting physical parameters and predicting their impact on cell performance. The simulator is used to optimize cell design and analyze performance with scaling, NC randomness and NC number fluctuations.
URI: http://dx.doi.org/10.1109/IEDM.2007.4419109
http://dspace.library.iitb.ac.in/xmlui/handle/10054/15494
http://hdl.handle.net/100/2237
ISBN: 978-1-4244-1507-6
Appears in Collections:Proceedings papers

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